Compositional and electrical properties of InSb MOS structureSU, Y. K; HUANG, C. J; LEU, R. L et al.Solid-state electronics. 1991, Vol 34, Num 1, pp 107-109, issn 0038-1101, 3 p.Article

Fabrication of S-N-S junction with the normal layer of InSbHATO, T; AKAIKE, H; TAKAI, Y et al.Japanese journal of applied physics. 1991, Vol 30, Num 7B, pp L1273-L1275, issn 0021-4922, 2Article

OPTICALLY INDUCED AVALANCHE IN INSBGRAVE T; SCHOELL E; WURZ H et al.1983; JOURNAL OF PHYSICS. C. SOLID STATE PHYSICS; ISSN 0022-3719; GBR; DA. 1983; VOL. 16; NO 9; PP. 1693-1711; BIBL. 27 REF.Article

FILAMENTATION OF HELICON WAVES IN SEMICONDUCTORSSALIMULLAH M; ALAM MN.1982; J. APPL. PHYS.; ISSN 0021-8979; USA; DA. 1982; VOL. 53; NO 6; PP. 4534-4537; BIBL. 10 REF.Article

CALCUL DU DOMAINE D'HOMOGENEITE DE L'ANTIMONIURE D'INDIUMZAITOV FA; GORSHKOVA OV; POLYAKOV A YA et al.1981; IZVESTIJA AKADEMII NAUK SSSR. NEORGANICESKIE MATERIALY; ISSN 0002-337X; SUN; DA. 1981; VOL. 17; NO 9; PP. 1541-1544; BIBL. 19 REF.Article

INDIUM ANTIMONIDE AS AN X-RAY MONOCHROMATORGOHSHI Y; HIRAO O; MURATA M et al.1975; X-RAY SPECTROM.; G.B.; DA. 1975; VOL. 4; NO 2; PP. 74-76Article

ETUDE DE LA FACE (110) DU CRISTAL D'ANTIMONIURE D'INDIUM PAR LA METHODE DE DIFFRACTION DES ELECTRONS LENTSGALAEV AA; GORELIK SS; PARKHOMENKO YU N et al.1974; DOKL. AKAD. NAUK S.S.S.R.; S.S.S.R.; DA. 1974; VOL. 217; NO 6; PP. 1300-1301; H.T. 2; BIBL. 3 REF.Article

Optical bistability on reflection with an InSb étalon controlled by a guided waveSARID, D; JAMESON, R. S; HICKERNELL, R. K et al.Optics letters. 1984, Vol 9, Num 5, pp 159-161, issn 0146-9592Article

SATURATION OF INTERBAND MAGNETO-ABSORPTION IN INSBDENNIS RB; MACKENZIE HA; SMITH SD et al.1982; OPT. COMMUN.; ISSN 0030-4018; NLD; DA. 1982; VOL. 41; NO 5; PP. 345-349; BIBL. 13 REF.Article

RECOMBINAISON AUGER DANS LES SEMICONDUCTEURS DE TYPE P A BANDE ETROITEGEL'MONT BL.1981; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 7; PP. 1316-1319; BIBL. 7 REF.Article

DISLOCATION VELOCITIES IN INDIUM ANTIMONIDE.MIHARA M; NINOMIYA T.1975; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1975; VOL. 32; NO 1; PP. 43-52; ABS. ALLEM.; BIBL. 19 REF.Article

Regenerative pulsations in an InSb bistable etalonMACKENZIE, H. A; REID, J. J. E; AL-ATTAR, H. A et al.Optics communications. 1986, Vol 60, Num 3, pp 181-186, issn 0030-4018Article

IMPACT IONISATION PROBABILITY IN INSBDEVREESE JT; VAN WELZENIS RG; EVRARD RP et al.1982; APPLIED PHYSICS. A, SOLIDS AND SURFACES; ISSN 0721-7250; DEU; DA. 1982; VOL. 29; NO 3; PP. 125-132; BIBL. 14 REF.Article

CORROSION ET PROPRIETES DES PLANS (111) DE INSBMAZURKEVICH YA S; ZOZULYA NI; KOSTYUK LS et al.1975; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; S.S.S.R.; DA. 1975; VOL. 11; NO 4; PP. 611-616; H.T. 1; BIBL. 14 REF.Article

MECANISME DE CREATION PAR IONISATION DE DEFAUTS DE STRUCTURE DANS L'ANTIMONIURE D'INDIUMABDULLAEV A; VITOVSKIJ NA; MASHOVETS TV et al.1975; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1975; VOL. 9; NO 1; PP. 68-75; BIBL. 20 REF.Article

SYSTEMATIC CONTROL OF DOPING CHARACTERISTICS OF N-INSB BY NUCLEAR REACTIONS.KUCHAR F; FANTNER E; BAUER G et al.1974; PHYS. STATUS SOLIDI, A; ALLEM.; DA. 1974; VOL. 24; NO 2; PP. 513-518; ABS. ALLEM.; BIBL. 11 REF.Article

Exploration of the inherent magnetoresistance in InSb thin filmsTONG ZHAN; HARRIS, J. J; BRANFORD, W. R et al.Semiconductor science and technology. 2006, Vol 21, Num 12, pp 1543-1546, issn 0268-1242, 4 p.Article

Direct observation of Sb dimers on InSb(100)-c(4×4)MCCONVILLE, C. F; JONES, T. S; LEIBSLE, F. M et al.Surface science. 1994, Vol 303, Num 3, pp L373-L378, issn 0039-6028Article

Phase transition in partially covalent semiconductors-InSbSINGH, S; SINGH, R. K.Journal of the Physical Society of Japan. 1997, Vol 66, Num 6, pp 1714-1717, issn 0031-9015Article

Profile imaging of the InSb{111}A,B-(2 x 2) surfacesMISHIMA, T; OSAKA, T.Surface science. 1998, Vol 395, Num 2-3, pp L256-L260, issn 0039-6028Article

Reflection high-energy electron diffraction analysis of the InSb{111}A, B-(2 x 2 ) surfacesOHTAKE, A; NAKAMURA, J.Surface science. 1998, Vol 396, Num 1-3, pp 394-399, issn 0039-6028Article

Contribution au développement d'un capteur en couche mince pour la mesure de champ magnétique = Developement of thin film magnetic sensorLEE, S.-G; HUBIN, M.Annales de chimie (Paris. 1914). 1995, Vol 20, Num 7-8, pp 407-410, issn 0151-9107Conference Paper

Recent investigations on the growth of antimony based semiconductorsBHAT, H. L.SPIE proceedings series. 1998, pp 221-227, isbn 0-8194-2756-X, 2VolConference Paper

Dark current analysis of InSb photodiodesHOPKINS, F. K; BOYD, J. T.Infrared physics. 1984, Vol 24, Num 4, pp 391-395, issn 0020-0891Article

EXCITATION DE POLARITONS SUPERFICIELS PAR LE RAYONNEMENT LASER DANS DES SEMICONDUCTEURS A BANDE INTERDITE ETROITEVO KHONG AN.1982; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1982; VOL. 16; NO 1; PP. 82-88; BIBL. 13 REF.Article